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HiPerFET TM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t rr , HDMOS TM Family
IXFH14N80
IXFH15N80
V DSS I D25 R DS(on)
800 V 14 A 0.70 ?
800 V 15 A 0.60 ?
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
800
800
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
(TAB)
I D25
T C = 25 ° C
14N80
15N80
14
15
A
A
I DM
I AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
14N80
15N80
14N80
56
60
14
A
A
A
G = Gate
S = Source
D = Drain
TAB = Drain
15N80
15
A
E AR
dv/dt
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
30
5
mJ
V/ns
Features
Low R DS (on) HDMOS TM process
P D
T J
T JM
T stg
T L
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
300
-55 ... +150
150
-55 ... +150
300
W
° C
° C
° C
° C
? International standard packages
?
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
6
g
- easy to drive and to protect
? Fast intrinsic Rectifier
Applications
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
?
?
?
DC-DC converters
Synchronous rectification
Battery chargers
V DSS
V GS = 0 V, I D = 3 mA
V DSS temperature coefficient
800
0.096
V
%/K
?
?
Switched-mode and resonant-mode
power supplies
DC choppers
V GS(th)
I GSS
V DS = V GS , I D = 4 mA
V GS(th) temperature coefficient
V GS = ± 20 V DC , V DS = 0
2.5
-0.214
4.5
± 100
V
%/K
nA
?
?
?
AC motor control
Temperature and lighting controls
Low voltage relays
V GS = 10 V, I D = 0.5 I D25
I DSS
R DS(on)
V DS = V DSS T J = 25 ° C
V GS = 0 V T J = 125 ° C
14N80
15N80
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
25
1
0.70
0.60
μ A
mA
?
?
Advantages
? Easy to mount with 1 screw
(isolated mounting screw hole)
? Space savings
? High power density
? 2002 IXYS All rights reserved
DS96523D(12/02)
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